1. This new 3D XPoint memory could last forever

    Intel and Micron this week unveiled a new type of memory they plan to mass produce that is purportedly 1,000 times faster than NAND flash and has 1,000 times the endurance. One thousand times the endurance would be about one million erase-write cycles, meaning the new memory would last pretty much forever. By comparison, today's NAND flash lasts for between 3,000 and 10,000 erase-write cycles.

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    1. It's more expensive than NAND and cheaper than DRAM, and faster than NAND but slower than DRAM.
    2. It's some sort of phase-change mechanism. They told me it's not phase-change memory, but every one else says it's phase-change memory. It may involve some sort of phase-change mechanism.
    3. This eliminates the need for transistors, increasing capacity and reducing cost.
    4. The companies carefully skirted such questions. They were intentionally unclear about what it is.
    5. In addition, the combination of the architecture and the unique set of materials in both the memory cell and selector enable 3D XPoint technology to achieve increased density, along with significant improvements in performance and endurance.
    6. I don't think you can replace DRAM entirely.
    7. The massive amount of data created and digested requires extensive analytics abilities and thus this could improve identifying fraud detection, transaction processing, genomics research, oil/gas mining exploration, IoT implications, etc.
    8. Future generations of this technology can increase the number of memory layers and/or use traditional lithographic pitch scaling to increase die capacity.
    9. For decades, the industry has searched for ways to reduce the lag time between the processor and data to allow much faster analysis.
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